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Preliminary Technical Information
Polar TM HiPerFET TM
Power MOSFET
( Electrically Isolated Tab)
IXFL32N120P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1200V
24A
340m Ω
300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS i5-Pak TM
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
1200
V
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
1200
± 30
± 40
V
V
V
G
S
D
Isolated Tab
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
24
100
A
A
G = Gate
S = Source
D
= Drain
I A
E AS
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
Weight
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
50/60 Hz, RMS, 1 minute
I ISOL ≤ 1mA t = 1s
Mounting Force
16
2
20
520
-55 ... +150
150
-55 ... +150
300
260
2500
3000
40..120/4.5..27
8
A
J
V/ns
W
° C
° C
° C
°C
°C
V~
V~
N/lb.
g
Features
Silicon Chip on Direct-Copper-Bond
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
Avalanche Rated
Fast Intrinsic Diode
Advantages
Easy Assembly
Space Savings
High Power Density
Applications
Switch-Mode and Resonant-Mode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 3mA
Characteristic Values
Min. Typ. Max.
1200
V
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 300
V
nA
Robotics and Servo Controls
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
Note 2, T J = 125 ° C
V GS = 10V, I D = 16A, Note 1
50 μ A
5 mA
340 m Ω
? 2010 IXYS CORPORATION, All Rights Reserved
DS99908B(01/10)
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